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US 12,009,216 B2Granted
Methods of forming silicide contact in field-effect transistors
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Hsiung Lin, Shih-Cheng Chen, Chih-Hao Wang, Jung-Hung Chang, Jui-Chien Huang
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Abstract
A semiconductor structure includes a semiconductor fin extending from a substrate, a source/drain (S/D) feature disposed over the semiconductor fin, a silicide layer disposed over the S/D feature, where the silicide layer extends along a sidewall of the S/D feature, and an etch-stop layer (ESL) disposed along a sidewall of the silicide layer.
Claims20
A method, comprising:
- providing a workpiece comprising a gate structure over a semiconductor fin that protrudes from a substrate;
- forming a dielectric structure extending along sidewalls of the gate structure and the semiconductor fin;
- etching back the semiconductor fin to form a first recess;
- removing a first portion of the dielectric structure to laterally enlarge the first recess;
- forming a source/drain (S/D) feature in the enlarged first recess;
- after the forming of the S/D feature, removing a second portion of the dielectric structure to form a second recess;
- forming a silicide layer in the second recess and on the S/D feature;
- and
- after the forming of the silicide layer, forming an etch stop layer on the silicide layer and a dielectric layer on the etch stop layer.
6 more elements
A method, comprising:
- receiving a workpiece comprising a dummy gate structure engaging a semiconductor fin protruding from a substrate, the dummy gate structure extending lengthwise along a first direction;
- recessing the semiconductor fin to form a source/drain recess;
- enlarging the source/drain recess along the first direction;
- forming a source/drain feature in the enlarged source/drain recess;
- forming a silicide layer extending along a sidewall surface and a top surface of the source/drain feature;
- after the forming of the silicide layer, replacing the dummy gate structure with a metal gate stack.
3 more elements
A method, comprising:
- forming a semiconductor fin protruding from a substrate;
- forming a source/drain feature in and over a source/drain region of the semiconductor fin;
- forming a silicide layer extending along a sidewall surface and a top surface of the source/drain feature;
- conformally forming a contact etch stop layer, the contact etch stop layer comprises a first portion extending along a sidewall surface of the silicide layer and a second portion on a top surface of the source/drain feature;
- and
- forming a source/drain contact extending through the second portion of the contact etch stop layer to directly contact the silicide layer.
3 more elements
Dependencies are inferred from the claim text.