Semiconductor device structure with silicide layer

A semiconductor device structure, comprising:

• a substrate having a base portion and a fin portion over the base portion;
• an epitaxial structure over the fin portion;
• a dielectric fin over the base portion, wherein the dielectric fin is spaced apart from the epitaxial structure;
• and
• a silicide layer wrapping around the epitaxial structure, wherein a first lower portion of the silicide layer is between the epitaxial structure and the base portion.

A semiconductor device structure, comprising:

• a substrate having a base portion and a fin portion over the base portion;
• an epitaxial structure over the fin portion;
• a liner layer over a sidewall of the fin portion;
• a dielectric fin over the base portion, wherein the dielectric fin is spaced apart from the epitaxial structure;
• and
• a silicide layer wrapping around the epitaxial structure, wherein a thickness of the silicide layer decreases toward the liner layer.