US 12,009,209 B2 · Process for preparing a support for a semiconductor structure

Abstract

A process for preparing a support comprises the placing of a substrate on a susceptor in a chamber of a deposition system, the susceptor having an exposed surface not covered by the substrate; the flowing of a precursor containing carbon in the chamber at a deposition temperature so as to form at least one layer on an exposed face of the substrate, while at the same time depositing species of carbon and of silicon on the exposed surface of the susceptor. The process also comprises, directly after the removal of the substrate from the chamber, a first etch step consisting of the flowing of an etch gas in the chamber at a first etching temperature not higher than the deposition temperature so as to eliminate at least some of the species of carbon and silicon deposited on the susceptor.

Claims18

Dependent claims

A charge trapping layer for a semiconductor structure support, comprising:

at least one polycrystalline charge trapping material;
and
at least one polycrystalline interlayer directly adjacent to the charge trapping material, the at least one polycrystalline interlayer comprising an alloy of silicon and carbon,
wherein a lattice parameter of the at least one polycrystalline charge trapping material is greater than a lattice parameter of the at least one polycrystalline interlayer.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

17/938,427Filed 6 Oct 2022 · continuation

Priority

FR 175609230 Jun 2017

Published

US 2023/0033356 A12 Feb 2023

Granted

11 Jun 2024

Term ends

Not estimatedThe source records don’t support an estimate.

Classification10 codes

H10P 14/36
Of semiconductor materials: characterised by treatments done before the formation of the materials
H10P 90/1918
Using bonding: including charge trapping layers, e.g. polycrystalline materials
C23C 16/24
Characterised by the deposition of inorganic material, other than metallic material: deposition of silicon only
C23C 16/26
Characterised by the deposition of inorganic material, other than metallic material: deposition of carbon only

Family

PCT/EP2018/067262Parent of this continuation · filed 27 Jun 2018

US 2023/0033356 A1Pre-grant publication · published 2 Feb 2023

Application16/618,757Parent of this continuation

US 11,508,578 B2Parent of this continuation

US 2020/0152459 A1Published application

US 12,009,209 B2This patent

From the US filing history. Foreign family members aren’t listed.

Process for preparing a support for a semiconductor structure

Life of this patent

Process for preparing a support for a semiconductor structure

Life of this patent

Abstract

Claims18