Bias temperature instability of SiO2 layers

A method for improving a bias temperature instability of a SiO2 layer, the method comprising:

• exposing the SiO2 layer to atomic hydrogen from a remote plasma source, wherein the exposure is at a low first temperature;
• and
• after exposure to atomic hydrogen, sintering the SiO2 layer in a presence of molecular hydrogen at a second temperature, wherein the second temperature is greater than the low first temperature.