Using a self-assembly layer to facilitate selective formation of an etching stop layer

A method, comprising:

• forming a first layer over a first conductive component, wherein the first conductive component is surrounded laterally by a first interlayer dielectric (ILD), and wherein the first layer includes a head group that has an affinity with the first conductive component but not with the first ILD;
• selectively depositing a first dielectric layer over the first ILD;
• forming a second ILD over the first layer and over the first dielectric layer;
• etching an opening in the second ILD, wherein the opening at least partially exposes an upper surface of the first conductive component and partially exposes an upper surface of the first dielectric layer;
• and
• forming a second conductive component in the opening.

A method, comprising:

• forming a first conductive component in a first interlayer dielectric (ILD);
• forming a first layer directly on an upper surface of the first conductive component, wherein the first layer includes a head group and a tail group, wherein the head group has an affinity with the first conductive component but not with the first ILD, and wherein the tail group includes a plurality of strands that are horizontally separated from one another and that each extend at least partially upwards;
• selectively depositing a first dielectric layer over the first ILD;
• forming a second ILD over the first layer and over the first dielectric layer;
• performing an etching process to form an opening that vertically extends through the second ILD and the first layer, wherein the first dielectric layer has a substantially lower etching rate than the second ILD and the first layer during the etching process;
• and
• filling the opening with a second conductive component.