Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A method of manufacturing a semiconductor device, comprising:

• forming a Si- and N-containing film on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including:
• forming a first Si- and N-containing layer having Cl termination on its surface by supplying SiCl4 to the substrate to cause NH termination on the surface of the substrate to react with the SiCl4 under a condition where self-limitation occurs in the reaction of the NH termination and the SiCl4;
• and
• forming a second Si- and N-containing layer having NH termination on its surface by supplying a reactant containing N and H to the substrate to cause the Cl termination on the surface of the first Si- and N-containing layer to react with the reactant.

A substrate processing apparatus, comprising:

• a reactant supply system configured to supply a reactant containing N and H to a substrate;
• a SiCl4 supply system configured to supply SiCl4 to the substrate;
• a heater configured to heat the substrate;
• and
• a controller configured to be capable of controlling the reactant supply system, the SiCl4 supply system, and the heater so as to perform a process comprising:
• forming a Si- and N-containing film on a surface of the substrate by performing a cycle a predetermined number of times, the cycle including:
• forming a first Si- and N-containing layer having Cl termination on its surface by supplying the SiCl4 to the substrate to cause NH termination on the surface of the substrate to react with the SiCl4 under a condition where self-limitation occurs in the reaction of the NH termination and the SiCl4;
• and
• forming a second Si- and N-containing layer having NH termination on its surface by supplying the reactant to the substrate to cause the Cl termination on the surface of the first Si- and N-containing layer to react with the reactant.