Film-forming method, manufacturing method of electronic device, and plasma atomic layer deposition apparatus

A plasma atomic layer deposition apparatus including a processing chamber in which a film is formed over a substrate by plasma processing, the apparatus using a mask made of a magnetic substance disposed over the substrate, the apparatus comprising:

• a substrate loading unit over which the substrate is loaded, the substrate loading unit being provided in the processing chamber;
• an upper electrode provided in the processing chamber and above the substrate loading unit;
• a high frequency power source unit connectable to the upper electrode to supply a high frequency voltage to the upper electrode;
• a magnetic field generating unit provided in the substrate loading unit, the magnetic field generating unit including an electromagnet configured to generate a magnetic field when supplied with a current;
• and
• a control unit connected to the magnetic field generating unit and to the high frequency power source unit,
• the control unit being configured to execute timing of the magnetic field and plasma generation to ensure that no magnetic field is generated in the electromagnet when plasma is generated in the processing chamber,
• the control unit executing the timing by switching the current flow to the electromagnet OFF when the high frequency voltage is ON and switching the current flow to the electromagnet ON when the high frequency voltage is OFF.