Temperature control method and temperature control device
AssigneeTokyo Electron Limited
InventorRyo Matsubara
Life of this patent
Estimating the term…
Loading patent…
AssigneeTokyo Electron Limited
InventorRyo Matsubara
Estimating the term…
A temperature control method of a chamber of a plasma processing apparatus includes: (a) providing a substrate in the chamber; (b) measuring a pre-processing temperature of an internal component of the chamber; (c) determining a temperature control condition based on a difference between the pre-processing temperature measured in (b) and a target temperature that has been preset in advance; (d) performing a process including at least one of increasing the temperature of the internal component by a first plasma of a first processing gas and cooling the internal component by purging the chamber with a cooling gas, based on the temperature control condition; and (e) processing the substrate with a second plasma of a second processing gas.
A temperature control method comprising:
A temperature control device of a substrate processing apparatus,
A temperature control device of a substrate processing apparatus, the temperature control device comprising:
Dependencies are inferred from the claim text.