Plasma processing apparatus

A plasma processing apparatus comprising:

• a processing chamber in which a sample is subjected to plasma processing;
• a first radio frequency power supply configured to supply a first radio frequency power with which plasma is generated;
• a sample stage on which the sample is placed;
• a second radio frequency power supply configured to supply a second radio frequency power to the sample stage;
• and
• a control device configured to, when the first radio frequency power is modulated by a first waveform having a first period and a second period adjacent to the first period and the second radio frequency power supply is modulated by a second waveform having a period A and a period B, control the second radio frequency power supply such that each second radio frequency power in the period A is supplied in the first period and the second period, wherein
• an amplitude in the second period is smaller than an amplitude in the first period and larger than 0, and
• an amplitude in the period A is larger than an amplitude in the period B.