Semiconductor device for memory device
AssigneeNanya Technology Corporation
InventorShih-Ting Lin
Life of this patent
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Abstract
A semiconductor device can be applied to a memory device. The semiconductor device of the disclosure includes a voltage sensor, a convertor and a command/address on-die-termination (CA_ODT) circuit. The voltage sensor receives a voltage setting command, and sense a voltage level of the voltage setting command to generate a sensing signal. The convertor generates a setting signal in response to the sensing signal. The CA_ODT circuit generates a power voltage for the memory device in response to the setting signal, wherein a voltage level of the power voltage corresponds to the voltage level of the voltage setting command.
Claims11
A semiconductor device for a memory device, comprising:
- a voltage sensor, configured to receive a voltage setting command, and sense a voltage level of the voltage setting command to generate a sensing signal;
- a convertor, coupled to the voltage sensor, configured to generate a setting signal in response to the sensing signal;
- and
- a command/address on-die-termination (CA_ODT) circuit, coupled between the convertor and the memory device, configured to generate a power voltage for the memory device in response to the setting signal, wherein a voltage level of the power voltage corresponds to the voltage level of the voltage setting command.
Dependencies are inferred from the claim text.