Signal calibration method, memory storage device, and memory control circuit unit
AssigneePhison Electronics Corp.
InventorsYi-Chung Chen, Ming-Chien Huang
Life of this patent
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AssigneePhison Electronics Corp.
InventorsYi-Chung Chen, Ming-Chien Huang
Estimating the term…
A signal calibration method, a memory storage device, and a memory control circuit unit are provided. The signal calibration method includes: generating a clock signal and a data strobe signal according to an internal clock signal; respectively transmitting the clock signal and the data strobe signal to a target volatile memory module among multiple volatile memory modules through a first signal path and a second signal path; obtaining a shift value between the data strobe signal and the clock signal at the target volatile memory module; and storing an initial delay setting of the data strobe signal according to delay information of the data strobe signal in response to the shift value being greater than a threshold value.
A signal calibration method for a memory storage device, the memory storage device comprising a plurality of volatile memory modules, the signal calibration method comprising:
A memory storage device, comprising:
A memory control circuit unit for controlling a plurality of volatile memory modules, the memory control circuit unit comprising:
Dependencies are inferred from the claim text.