Memory management method, memory storage device and memory control circuit unit
AssigneePhison Electronics Corp.
InventorsWei-Cheng Li, Ping-Cheng Chen, Yu-Chung Shen, Jia-Li Xu
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AssigneePhison Electronics Corp.
InventorsWei-Cheng Li, Ping-Cheng Chen, Yu-Chung Shen, Jia-Li Xu
Estimating the term…
A memory management method, a memory storage device, and a memory control circuit unit are disclosed. The method includes: sending an erase command sequence configured to erase a first physical erasing unit in a rewritable non-volatile memory module; and sending a write command sequence configured to perform a dummy write operation on a second physical erasing unit in the rewritable non-volatile memory module with correspondence to the erasing of the first physical erasing unit. The dummy write operation is configured to store dummy data to the second physical erasing unit.
A memory management method, configured for a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of physical erasing units, and the memory management method comprises:
A memory storage device, comprising:
A memory control circuit unit, configured to control a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of physical erasing units, and the memory control circuit unit comprises:
Dependencies are inferred from the claim text.