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US 12,007,389 B2Granted
Field effect transistor, device including the transistor, and methods of forming and using same
OwnerBharath Takulapalliinventor
Life of this patent
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Abstract
The present disclosure provides an improved field effect transistor and device that can be used to sense and characterize a variety of materials. The field effect transistor and/or device including the transistor may be used for a variety of applications, including genome sequencing, protein sequencing, biomolecular sequencing, and detection of ions, molecules, chemicals, biomolecules, metal atoms, polymers, nanoparticles and the like.
Claims11
A device comprising:
- a substrate comprising a first surface and a second surface opposite the first surface;
- an etch region within a portion of the substrate;
- an insulating region formed within the substrate and proximate the etch region;
- a semiconductor layer overlying the insulating region;
- a source region formed using a first portion of the semiconductor layer, the source region overlying the insulating region and overlying the first surface of the substrate;
- a drain region formed using a second portion of the semiconductor layer, the drain region overlying the buried insulating region and overlying the second surface of the substrate;
- and
- a channel formed using a third portion of the semiconductor layer,
- wherein the device comprises a nanopore formed within the etch region, and
- wherein the channel is formed as a bi-feature having an opening of less than 1000 nm.
7 more elements
A method of forming a sensor device, the method comprising the steps of:
- providing a substrate comprising a first surface and a second surface opposite the first surface;
- etching a portion of the substrate to form an etch region open to the first surface and the second surface to thereby form a nanopore;
- forming an insulating region proximate the etch region;
- forming a thin film overlying the insulating region;
- forming a source region using the thin film on one side of the nanopore;
- and
- forming a drain region using the thing film on a second side of the nanopore,
- wherein a channel region is formed between the source region and the drain region.
5 more elements
Dependencies are inferred from the claim text.