Method for preparing an aluminum doped silicon carbide crystal by providing a compound including aluminum and oxygen in a capsule comprised of a first and second material

A method for preparing an aluminum doped silicon carbide crystal, comprising:

• providing a silicon carbide source material and a silicon carbide monocrystalline seed in a growth crucible;
• providing a solid aluminum dopant source material comprising a compound including aluminum and oxygen in a capsule;
• and
• heating the growth crucible, with the capsule positioned therein, in a manner effective for producing silicon and carbon bearing vapors from the silicon carbide source material in the growth crucible and aluminum bearing vapors from the solid aluminum dopant source material in the capsule, and for precipitating the silicon and carbon bearing vapors and the aluminum bearing vapors on the silicon carbide monocrystalline seed to grow the aluminum doped silicon carbide crystal;
• wherein the capsule includes a first material resistant to degradation from the aluminum dopant source and aluminum bearing vapors and a second material resistant to degradation from the silicon and carbon bearing vapors, the first material being different from the second material, and
• wherein the capsule includes an inner component at least partially formed of the first material and an outer component disposed about the inner component and at least partially formed of the second material, wherein the outer component is in the form of an outer crucible, and wherein the inner component is in the form of an inner crucible positioned in the outer crucible.