Polishing liquid and chemical mechanical polishing method
AssigneeFUJIFILM Corporation
InventorTetsuya Kamimura
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AssigneeFUJIFILM Corporation
InventorTetsuya Kamimura
Estimating the term…
The present invention provides a polishing liquid which has a good polishing speed and reduces the occurrence of dishing on a surface to be polished of an object to be polished having a cobalt-containing film after polishing in a case where the polishing liquid is applied to CMP of the object to be polished, and makes it possible to manufacture a semiconductor product having excellent reliability. The present invention also provides a chemical mechanical polishing method using the polishing liquid. The polishing liquid of an embodiment of the present invention is a polishing liquid used for chemical mechanical polishing of an object to be polished having a cobalt-containing film, the polishing liquid including colloidal silica, one or more specific compounds selected from the group consisting of glycine, alanine, sarcosine, and iminodiacetic acid, a passivation film forming agent, hydrogen peroxide, sodium, and ammonia, in which a mass ratio of a content of ammonia to a content of sodium is 1×103 to 1×106, and a pH is 5.5 to 8.0.
A polishing liquid used for chemical mechanical polishing of an object to be polished having a cobalt-containing film, the polishing liquid comprising:
A polishing liquid used for chemical mechanical polishing of an object to be polished, the polishing liquid comprising:
Dependencies are inferred from the claim text.