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US 12,006,209 B2Granted
MEMS and NEMS structures
AssigneeObsidian Sensors, Inc.
InventorsJohn Hong, Tallis Chang, Edward Chan, Bing Wen, Yaoling Pan, Sean Andrews
Life of this patent
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Abstract
A method of manufacturing an electromechanical systems structure includes manufacturing sub-micron structural features. In some embodiments, the structural features are less than the lithographic limit of a lithography process.
Claims15
A method of manufacturing an electromechanical systems structure comprising:
- providing a stack, wherein the stack comprises:
- a structural layer extending in a plane,
- a sidewall layer comprising:
- a first portion lying in a plane parallel to the structural layer plane and
- a second portion lying in a plane transverse to the structural layer plane,
- an etch-stop layer, positioned between the sidewall layer and the structural layer,
- comprising an etch-selectivity different from an etch-selectivity of the structural
- layer and an etch-selectivity of the sidewall layer, and
- a mold comprising a wall parallel to the sidewall layer's second portion;
- positioning a sacrificial layer between the structural layer and a substrate;
- etching the sidewall layer's first portion to expose the etch-stop layer;
- removing the mold;
- etching the etch-stop layer such that the sidewall layer's second portion masks a portion of the etch-stop layer;
- removing the sidewall layer's second portion;
- and
- etching the structural layer such that the portion of the etch-stop layer masks a portion of the structural layer.
13 more elements
A bolometer comprising:
- a glass substrate;
- a structure coupled to the glass substrate;
- and
- a bolometer pixel coupled to the structure,
- wherein the structure is manufactured by:
- providing a stack, wherein the stack comprises:
- a structural layer extending in a plane,
- a sidewall layer comprising:
- a first portion lying in a plane parallel to the structural layer plane and
- a second portion lying in a plane transverse to the structural layer plane,
- an etch-stop layer, positioned between the sidewall layer and the structural layer, comprising an etch-selectivity different from an etch-selectivity of the structural layer and an etch-selectivity of the sidewall layer, and
- a mold comprising a wall parallel to the sidewall layer's second portion;
- positioning a sacrificial layer between the structural layer and a substrate;
- etching the sidewall layer's first portion to expose the etch-stop layer;
- removing the mold;
- etching the etch-stop layer such that the sidewall layer's second portion masks a portion of the etch-stop layer;
- removing the sidewall layer's second portion;
- and
- etching the structural layer such that the portion of the etch-stop layer masks a portion of the structural layer.
16 more elements
Dependencies are inferred from the claim text.