Laser bonding apparatus and method

A laser bonding apparatus, comprising:

• a stage configured to receive a substrate;
• a laser device over the stage, the laser device configured to provide the substrate with a laser beam to heat a plurality of semiconductor chips;
• a first rotation support that surrounds the stage and supports the laser device, the first rotation support configured to drive the laser device to rotate in an azimuthal angle direction;
• a second rotation support that includes a plurality of axle parts associated with opposite outer sidewalls of the first rotation support and an arc part connected between the plurality of axle parts, the arc part having a first contact point between the laser device and one of the plurality of axle parts;
• a plurality of guides provided on an inner sidewall of the first rotation support under the second rotation support, the guides having a plurality of second contact points that are arranged in a polar angle direction to correspond to the first contact point;
• and
• a controller connected to the first contact point and the second contact points, the controller configured to distinguish an inclined angle in the polar angle direction of the laser device with respect to the semiconductor chips whenever the first contact point is connected to one of the second contact points.

A laser bonding apparatus, comprising:

• a stage configured to receive a substrate;
• a laser device over the stage, the laser device configured to irradiate a laser beam onto the substrate;
• a first rotation support that surrounds the stage, the first rotation support configured to drive the laser device to rotate in an azimuthal angle direction;
• a second rotation support configured to support the laser device and configured to drive the laser device to rotate in a polar angle direction intersecting the azimuthal angle direction;
• and
• a controller configured to determine a number of semiconductor chips stacked on the substrate, and to control rotation of the first and second rotation supports based on the number of semiconductor chips stacked on the substrate.