Tunable resistive random access memory cell
AssigneeInternational Business Machines Corporation
InventorsMin Gyu Sung, Soon-Cheon Seo, Chanro Park
Life of this patent
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Abstract
A method of manufacturing an RRAM cell includes forming a first wire, forming an insulator on the first wire, the insulator having a pore and an insulator surface, and forming a first electrode layer on the first wire and the insulator, the first electrode having an electrode surface. The method further includes recessing the first electrode layer such that the electrode surface is recessed toward the first wire from the insulator surface, forming a switching layer on the insulator and the first electrode, and forming a second electrode on the switching layer.
Claims20
A method of manufacturing a resistive random access memory (RRAM) cell, the method comprising:
- forming a first wire;
- forming an insulator on the first wire, the insulator having a pore and an insulator surface;
- forming a first electrode layer on the first wire and the insulator, the first electrode having an electrode surface;
- recessing the first electrode layer such that the electrode surface is recessed toward the first wire from the insulator surface;
- forming a switching layer on the insulator and the first electrode;
- and
- forming a second electrode on the switching layer.
A resistive random access memory (RRAM) cell comprising:
- a first electrode;
- a switching layer electrically connected to the first electrode;
- a second electrode electrically connected to the switching layer;
- wherein the switching layer has a stepped-bell shape comprising:
- a cup portion having a U-shape;
- a rim portion having an L-shape and being connected to the cup portion;
- and
- a disc portion having a flat shape and being connected to the rim portion.
A method of manufacturing a resistive random access memory (RRAM) cell, the method comprising:
- forming a first wire;
- forming an insulator on the first wire, the insulator having a pore and an insulator surface;
- forming a first electrode on the first wire and the insulator, the first electrode having an electrode surface;
- forming a plug in the first electrode the first electrode layer, the plug having a plug surface, wherein the electrode surface and the plug surface are recessed toward the first wire from the insulator surface;
- removing the plug;
- forming a switching layer on the insulator and the first electrode;
- and
- forming a second electrode on the switching layer.
Dependencies are inferred from the claim text.