Multi-bit storage device using phase change material
AssigneeToshiba Global Commerce Solutions, Inc.
InventorsTimothy Crockett, Lester Bartus, Jr.
Life of this patent
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Abstract
A non-volatile multi-bit storage device that includes a phase change material doped with n-type or p-type semiconductor impurities, a first set of electrodes ohmically coupled to the phase change material, a second set of electrodes configured to apply an electric field across the phase change material. To program the non-volatile multi-bit storage device, an electrical field is applied to the phase change material as crystal annealing cool down is performed. Application of the electric field during the crystal annealing cool down forms a rectified current path through the phase change material.
Claims11
A non-volatile multi-bit storage device comprising:
- a phase change material doped with n-type or p-type semiconductor impurities configured to form a rectified current path through the phase change material responsive to application of an electric field across the phase change material;
- a pair of phase change material electrodes ohmically coupled to the phase change material and located on first and second opposing sides of the phase change material;
- and
- a pair of electric field electrodes separated from the phase change material by a distance configured to form the electric field across the phase change material.
A non-volatile multi-bit storage device comprising:
- a phase change material configured to change between a crystalline state and an amorphous state to store a first data bit in the phase change material;
- and
- n-type or p-type semiconductor impurities included in the phase change material at a concentration that is configured to form a rectified current path through the phase change material responsive to application of an electric field across the phase change material to store a second data bit in the phase change material.
Dependencies are inferred from the claim text.