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US 12,004,432 B2Granted
Phase-change memory
AssigneesSTMicroelectronics (Crolles 2) SAS, STMicroelectronics (Rousset) SAS
InventorsPhilippe Boivin, Roberto Simola, Yohann Moustapha-Rabault
Life of this patent
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Abstract
The present description concerns a device including phase-change memory cells, each memory cell including a first resistive element in lateral contact with a second element made of a phase-change material.
Claims22
A device, comprising:
- phase-change memory cells, each memory cell of the phase-change memory cells including:
- a first element of a conductive material has a first surface opposite a second surface, the first surface contacts a second element of a phase-change material;
- and
- a first insulating layer covers the first and second elements, the second surface of the first element is exposed from the first insulating layer;
- a third element of a conductive material, an upper surface of the third element in contact with a lower surface of the second element;
- and
- a second insulating layer surrounds the third element,
- wherein the second element includes a vertical face extending from the upper face of the third element, the vertical face being in lateral contact with the first element.
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A structure, comprising:
- a first metallization level including a first conductive structure and a first dielectric layer adjacent to the first conductive structure;
- a second metallization level including a second conductive structure and a second dielectric layer adjacent to the second conductive structure;
- a phase-change element of a phase-change material between the first metallization level and the second metallization level in a first direction, the phase-change element electrically coupled to the first conductive structure, the phase-change element spaced away from the second metallization level in the first direction by an insulating region;
- and
- a resistive element in contact with the phase-change element by a first edge surface of the resistive element in a second direction that traverses the first direction, the resistive element spaced away from both the first metallization level and the second metallization level in the first direction.
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A method of manufacturing a device comprising phase-change memory cells, the method comprising:
- forming a phase-change element of a phase-change material over and electrically coupled to a metal structure in a metallization level;
- and
- forming a resistive element in lateral contact with the phase-change element, the resistive element spaced away from the metallization level by a first insulating layer.
A device, comprising:
- phase-change memory cells, each memory cell of the phase-change memory cells including:
- a first conductive element;
- a second element of a phase-change material having a first surface contacting the first conductive element;
- a third conductive element having a first surface transverse to the first surface of the second element, the first surface of the second element extending from the first surface of the third conductive element;
- and
- a first insulating layer surrounding the third conductive element.
3 more elements
Dependencies are inferred from the claim text.