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US 12,004,431 B2Granted
Structure and method for MRAM devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTsung-Chieh Hsiao, Po-Sheng Lu, Wei-Chih Wen, Liang-Wei Wang, Yu-Jen Wang, Dian-Hau Chen, Yen-Ming Chen
Life of this patent
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Abstract
A semiconductor device includes a bottom electrode; a magnetic tunneling junction (MTJ) element over the bottom electrode; a top electrode over the MTJ element; and a sidewall spacer abutting the MTJ element, wherein at least one of the bottom electrode, the top electrode, and the sidewall spacer includes a magnetic material.
Claims20
A semiconductor device, comprising:
- a bottom electrode;
- a magnetic tunneling junction (MTJ) element over the bottom electrode;
- a top electrode over the MTJ element;
- and
- a sidewall spacer abutting the MTJ element, wherein the top electrode includes a first conductive layer and a first barrier layer, wherein the first barrier layer includes a first sublayer, a second sublayer on the first sublayer, and a third sublayer on the second sublayer, wherein each of the first, second, and third sublayers is disposed on a bottom and two sidewall surfaces of the first conductive layer, wherein the second sublayer includes a magnetic material.
2 more elements
A semiconductor device, comprising:
- a bottom electrode;
- a magnetic tunneling junction (MTJ) element over the bottom electrode;
- a top electrode over the MTJ element;
- and
- a sidewall spacer abutting the MTJ element, wherein the sidewall spacer includes a first magnetic material, wherein the top electrode includes a first conductive layer and a first barrier layer on a bottom and two sidewalls of the first conductive layer, wherein each of the first conductive layer and the first barrier layer includes a second magnetic material, wherein the first barrier layer includes a first sublayer, a second sublayer on the first sublayer, and a third sublayer on the second sublayer, wherein each of the first, second, and third sublayers is disposed on a bottom and two sidewall surfaces of the first conductive layer, wherein the second sublayer includes the second magnetic material.
2 more elements
A semiconductor device, comprising:
- a bottom electrode;
- a magnetic tunneling junction (MTJ) element over the bottom electrode;
- a conductive hard mask layer over the MTJ element;
- a top electrode over the conductive hard mask layer;
- and
- a sidewall spacer abutting the MTJ element, wherein the top electrode includes a first conductive layer and a first barrier layer, the first barrier layer includes a first sublayer directly on the conductive hard mask layer and the sidewall spacer, a second sublayer on the first sublayer, and a third sublayer on the second sublayer, wherein at least the second sublayer is disposed on a bottom and two sidewall surfaces of the first conductive layer, wherein the second sublayer includes a first magnetic material.
3 more elements
Dependencies are inferred from the claim text.