Light-emitting device and apparatus including same

A light-emitting device comprising:

• a first electrode;
• a second electrode facing the first electrode;
• and
• an organic layer between the first electrode and the second electrode,
• wherein the organic layer includes a first emission layer, a second emission layer, and a charge generating unit between the first emission layer and the second emission layer,
• the charge generating unit includes an n-type charge generating layer, a p-type charge generating layer, and a p-type hole injection layer,
• wherein the n-type charge generating layer includes an n-type organic compound and a metal material,
• the n-type organic compound includes a phenanthrene-based compound, a phosphine oxide-based compound and/or a phenanthroline-based compound,
• the metal material includes at least one metal selected from an alkali metal, an alloy of an alkali metal, an alkaline earth metal, an alloy of an alkaline earth metal, a lanthanide metal, and an alloy of a lanthanide metal,
• the p-type charge generating layer and the p-type hole injection layer each independently include an inorganic semiconductor material,
• the inorganic semiconductor material included in the p-type charge generating layer and the inorganic semiconductor material included in the p-type hole injection layer each independently include a halide of a transition metal, a halide of a post-transition metal, bismuth, tellurium, a halide of bismuth, a sulfide of bismuth, a selenide of bismuth, a telluride of bismuth, a telluride of a transition metal, a telluride of a post-transition metal, a sulfide of a transition metal, a sulfide of a post-transition metal, a selenide of a transition metal, a selenide of a post-transition metal, or any combination thereof, and
• the inorganic semiconductor material included in the p-type charge generating layer is substantially identical to or different from the inorganic semiconductor material included in the p-type hole injection layer.