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US 12,004,355 B2Granted
Magnetic tunnel junction element and magnetoresistive memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsYoshiaki Sonobe, Hideto Yanagihara
Life of this patent
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Abstract
Provided is a magnetic tunnel junction element and a magnetoresistive memory device. The magnetic tunnel junction element includes a fixed layer maintaining a magnetization direction, an insulating layer, a free layer having a variable magnetization direction, and an antiferromagnetic oxide layer. The fixed layer, the free layer, and the antiferromagnetic oxide layer may be sequentially stacked. The free layer and the antiferromagnetic oxide layer may be in direct contact with each other.
Claims18
A magnetic tunnel junction element comprising:
- a fixed layer maintaining a magnetization direction;
- an insulating layer;
- a free layer having a variable magnetization direction;
- and
- an antiferromagnetic oxide layer in direct contact with the free layer, wherein
- the fixed layer, the free layer, the insulating layer, and the antiferromagnetic oxide layer are sequentially stacked,
- a thickness of the antiferromagnetic oxide layer is greater than or equal to about 0.5 nm and less than or equal to about 2 nm, and
- wherein an electrical resistance of the antiferromagnetic oxide layer is less than an electrical resistance of the insulating layer.
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A magnetoresistive memory device comprising:
- a magnetic tunnel junction element including a fixed layer maintaining a magnetization direction, an insulating layer, a free layer having a variable magnetization direction, and an antiferromagnetic oxide layer in direct contact with the free layer, wherein the fixed layer, the insulating layer, the free layer, and the antiferromagnetic oxide layer are sequentially stacked, a thickness of the antiferromagnetic oxide layer is greater than or equal to about 0.5 nm and less than or equal to about 2 nm;
- and
- an electrode configured to apply a voltage to the magnetic tunnel junction element, wherein
- an electrical resistance of the antiferromagnetic oxide layer is less than an electrical resistance of the insulating layer.
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Dependencies are inferred from the claim text.