Method of reducing wrap imparted to silicon wafer by semiconductor layers

Abstract

A method of reducing warp imparted to a silicon wafer having a (110) plane orientation and a <111> notch orientation by anisotropic film stress of a multilayer film that is to be formed on a surface of the silicon wafer, that includes forming the multilayer film on a surface of the silicon wafer in an orientation so that a direction in which the warp of the wafer will be greatest coincides with a direction in which Young's modulus of a crystal orientation of the silicon wafer is greatest. Also, a method of reducing warp imparted to a silicon wafer having a (111) plane orientation by isotropic film stress of a multilayer film to be formed on a surface of the silicon wafer, that includes, prior to forming the multilayer film, causing the silicon wafer to have an oxygen concentration of 8.0×1017 atoms/cm3 or more (ASTM F-121, 1979).

Dependencies are inferred from the claim text.