Binning in hybrid pixel structure of image pixels and event vision sensor (EVS) pixels

A method comprising:

• controlling, with control circuitry, a plurality of binning transistors according to a first mode;
• and
• controlling, with the control circuitry, the plurality of binning transistors to change from the first mode to a second mode,
• wherein, in the second mode, the plurality of binning transistors bins together a first portion of a plurality of pixel circuits in a pixel array and bins together a second portion of the plurality of pixel circuits, respectively, and
• wherein the first portion of the plurality of pixel circuits individually includes two or more intensity photodiodes and the second portion of the plurality of pixel circuits individually includes two or more vision sensor (EVS) photodiodes that are separate and distinct from the two or more intensity photodiodes.

An electronic device comprising:

• a pixel array including a plurality of pixel circuits;
• and
• a plurality of binning transistors,
• wherein a first portion of the plurality of pixel circuits individually includes two or more intensity photodiodes and a second portion of the plurality of pixel circuits individually includes two or more event vision sensor (EVS) photodiodes that are separate and distinct from the two or more intensity photodiodes, and
• wherein the plurality of binning transistors are configured to
• bin together the first portion,
• bin together the second portion, and
• bin together the first portion and bin together the second portion, respectively.