Air-gap type FBAR
AssigneeWisol Co., Ltd.
InventorsByung Hun Kim, Yong Hun Ko
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Abstract
An air-gap type film bulk acoustic resonator (FBAR) according to the present invention may include: a substrate comprising an air gap portion on an upper surface thereof; a lower electrode formed on the substrate; a piezoelectric layer formed on the lower electrode; an upper electrode formed on the piezoelectric layer; a protective layer formed on the upper electrode; and a beam structure extended in a dome shape from one side of the upper electrode to define a space portion between the upper electrode and the piezoelectric layer, wherein one end of the beam structure is in contact with the piezoelectric layer.
Claims14
An air-gap type film bulk acoustic resonator (FBAR) comprising:
- a substrate comprising an air gap portion on an upper surface thereof;
- a lower electrode formed on the substrate;
- a piezoelectric layer formed on the lower electrode;
- an upper electrode formed on the piezoelectric layer;
- and
- a beam structure comprising a protective layer formed on the upper electrode and extending in a dome shape from one side of the upper electrode to define a space portion between the upper electrode and the piezoelectric layer,
- wherein one end of the beam structure is in contact with the piezoelectric layer, and
- wherein an end of the protective layer protrudes beyond an end of the beam structure by a predetermined length.
An air-gap type film bulk acoustic resonator (FBAR) comprising:
- a substrate comprising an air gap portion on an upper surface thereof;
- a lower electrode formed on the substrate;
- a piezoelectric layer formed on the lower electrode;
- an upper electrode formed on the piezoelectric layer;
- and
- a beam structure extending in a dome-shape from one side of the upper electrode to define a space portion between the upper electrode and the piezoelectric layer,
- wherein one end of the beam structure is in direct contact with the piezoelectric layer,
- wherein the one end comprises a first end in contact with an upper surface of the piezoelectric layer by a predetermined width and a second end extending in a diagonal direction from the first end and spaced apart from the upper surface of the piezoelectric layer.
Dependencies are inferred from the claim text.