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US 12,003,220 B2Granted
Hybrid RF integrated circuit device
AssigneeMACOM Technology Solutions Holdings, Inc.
InventorsLei Zhao, Greg Durnan, Abdulrhman M. S. Ahmed
Life of this patent
Estimating the term…
Abstract
The present disclosure relates to an RF amplifier device including an IC chip including at least one transistor formed on a substrate, at least one operational circuit formed on the substrate and electrically coupled to the transistor, and a port configured to electrically couple the at least one operational circuit with operational circuitry outside the IC chip to adjust operation of the operational circuitry.
Claims29
A Radio Frequency (RF) amplifier device comprising:
- an integrated circuit (IC) chip comprising:
- a substrate;
- a first transistor formed on the substrate;
- a first operational circuit comprising one or more electrical components, other than a bonding pad, bond wire, or other conductor, formed on the substrate and electrically coupled to the first transistor, and configured to perform one or more of impedance matching, phase shifting, and harmonic termination operations;
- and
- a first port, other than an RF input or output, comprising a bond pad and at least one bond wire and configured to electrically couple the first operational circuit with external circuitry to thereby adjust the impedance matching, phase shifting, or harmonic termination operations;
- whereby the one or more components of the first operational circuit and the external circuitry together perform RF tuning.
4 more elements
An RF amplifier device comprising:
- an integrated circuit (IC) chip comprising:
- a substrate;
- a first transistor formed on the substrate in a first path;
- a second transistor formed on the substrate in a second path;
- a first operational circuit formed on the substrate and comprising one or more electrical components, other than a bonding pad, bond wire, or other conductor, and electrically coupled to the first transistor, and configured to perform one or more of impedance matching, phase shifting, and harmonic termination operations;
- and
- a port, other than an RF input or output, comprising a bond pad and at least one bond wire and configured to electrically couple the first operational circuit with external circuitry to thereby adjust the impedance matching, phase shifting, or harmonic termination operations;
- whereby the one or more components of the first operational circuit and the external circuitry together perform RF tuning.
5 more elements
An RF amplifier device comprising:
- an integrated circuit (IC) chip comprising:
- a substrate;
- a first transistor formed on the substrate,
- a second transistor formed on the substrate,
- a first operational circuit comprising one or more electrical components, other than a bonding pad, bond wire, or other conductor, wherein
- the first operational circuit is formed on the substrate,
- the first operational circuit is electrically coupled to both the first and second transistors, and
- the first operational circuit is configured to perform one or more of impedance matching, phase shifting, and harmonic termination operations;
- and
- a port, other than an RF input or output, comprising a bond pad and at least one bond wire and configured to electrically couple the first operational circuit with external circuitry to thereby adjust the impedance matching, phase shifting, or harmonic termination operations;
- whereby the one or more components of the first operational circuit and the external circuitry together perform RF tuning.
8 more elements
Dependencies are inferred from the claim text.