Modular parallel half-bridge integrated assembly with annular layout

A modular parallel half-bridge integrated assembly with an annular layout, comprising sub-modules,

• wherein the sub-modules each comprise an upper half-bridge insulated gate bipolar transistor (IGBT), a lower half-bridge IGBT, and direct current (DC) capacitors,
• wherein the DC capacitors comprises a first capacitor, a second capacitor, and a third capacitor, a positive terminal of the first capacitor is electrically connected to a first pin of a first inductor, a second pin of the first inductor is electrically connected to a DC positive terminal of a first IGBT of the upper half-bridge IGBT, a DC negative terminal of the first IGBT of the upper half-bridge IGBT is electrically connected to a first pin of a second inductor, a second pin of the second inductor is electrically connected to an electrical node, the first pin of the second inductor is electrically connected to a DC positive terminal of a second IGBT of the lower half-bridge IGBT, and a DC negative terminal of the second IGBT of the lower half-bridge IGBT is electrically connected to a negative terminal of the first capacitor;
• a positive terminal of the second capacitor is electrically connected to a first pin of a third inductor, a second pin of the third inductor is electrically connected to a DC positive terminal of a third IGBT of the upper half-bridge IGBT, a DC negative terminal of the third IGBT of the upper half-bridge IGBT is electrically connected to a first pin of a fourth inductor, a second pin of the fourth inductor is electrically connected to the second pin of the second inductor, the first pin of the fourth inductor is electrically connected to a DC positive terminal of a fourth IGBT of the lower half-bridge IGBT, and a DC negative terminal of the fourth IGBT of the lower half-bridge IGBT is electrically connected to a negative terminal of the second capacitor;
• and
• a positive terminal of the third capacitor is electrically connected to a first pin of a fifth inductor, a second pin of the fifth inductor is electrically connected to a DC positive terminal of a fifth IGBT of the upper half-bridge IGBT, a DC negative terminal of the fifth IGBT of the upper half-bridge IGBT is electrically connected to a first pin of a sixth inductor, a second pin of the sixth inductor is electrically connected to the second pin of the fourth inductor, the first pin of the sixth inductor is electrically connected to a DC positive terminal of a sixth IGBT of the lower half-bridge IGBT, and a DC negative terminal of the sixth IGBT of the lower half-bridge IGBT is electrically connected to a negative terminal of the third capacitor.