Semiconductor light-emitting element and semiconductor light-emitting device

A semiconductor light-emitting device, comprising:

• a semiconductor light-emitting element;
• and
• a mounting board including a first wiring electrode and a second wiring electrode, wherein:
• the semiconductor light-emitting element comprises:
• a semiconductor stack including an n-type layer, a light-emitting layer above the n-type layer, and a p-type layer above the light-emitting layer, the semiconductor stack having at least one n exposure portion which is a recess at which the n-type layer is exposed;
• a p wiring electrode layer on the p-type layer;
• an insulating layer that (i) continuously covers inner lateral surfaces of the at least one n exposure portion and part of a top surface of the p wiring electrode layer and (ii) has an opening portion that exposes the n-type layer at a bottom surface of the at least one n exposure portion;
• an n wiring electrode layer disposed above the p-type layer and the p wiring electrode layer via the insulating layer, the n wiring electrode layer being in contact with the n-type layer in the opening portion;
• and
• at least one first n connecting member that is a conductive member for electric connection to an external conductor,
• the at least one first n connecting member is a bump made of one of Au, Ag, Al, and Cu or an alloy made of a combination of at least two of Au, Ag, Al, and Cu, and is connected to the n wiring electrode layer in at least one first n terminal region,
• in a plan view, the at least one first n terminal region includes at least a portion of a region above the opening portion,
• the n wiring electrode layer and the p-type layer are disposed below the at least one first n terminal region in a cross section parallel to a stacking direction of the semiconductor stack,
• the at least one first n connecting member is bonded to the first wiring electrode of the mounting board,
• the p wiring electrode layer is bonded, in a region, to the second wiring electrode of the mounting board via a p connecting member that is a conductive member, the region being exposed from the n wiring electrode layer and the insulating layer, and
• in the cross section parallel to the stacking direction, a grain size of the at least one first n connecting member above the opening portion is larger than a grain size of the at least one first n connecting member above the p-type layer.

A semiconductor light-emitting device, comprising:

• a semiconductor light-emitting element;
• and
• a mounting board including a first wiring electrode and a second wiring electrode, wherein:
• the semiconductor light-emitting element comprises:
• a semiconductor stack including an n-type layer, a light-emitting layer above the n-type layer, and a p-type layer above the light-emitting layer, the semiconductor stack having at least one n exposure portion which is a recess at which the n-type layer is exposed;
• a p wiring electrode layer on the p-type layer;
• an insulating layer that (i) continuously covers inner lateral surfaces of the at least one n exposure portion and part of a top surface of the p wiring electrode layer and (ii) has an opening portion that exposes the n-type layer at a bottom surface of the at least one n exposure portion;
• an n wiring electrode layer disposed above the p-type layer and the p wiring electrode layer via the insulating layer, the n wiring electrode layer being in contact with the n-type layer in the opening portion;
• and
• at least one first n connecting member that is a conductive member for electric connection to an external conductor,
• the at least one first n connecting member is a bump made of one of Au, Ag, Al, and Cu or an alloy made of a combination of at least two of Au, Ag, Al, and Cu, and is connected to the n wiring electrode layer in at least one first n terminal region,
• in a plan view, the at least one first n terminal region includes at least a portion of a region above the opening portion,
• the n wiring electrode layer and the p-type layer are disposed below the at least one first n terminal region in a cross section parallel to a stacking direction of the semiconductor stack,
• the at least one first n connecting member is bonded to the first wiring electrode of the mounting board,
• the p wiring electrode layer is bonded, in a region, to the second wiring electrode of the mounting board via a p connecting member that is a conductive member, the region being exposed from the n wiring electrode layer and the insulating layer, and
• in the cross section parallel to the stacking direction, an outer shape of the at least one first n connecting member has a wide bottom shape that widens from a first wiring electrode layer side toward an n wiring electrode layer side.