Semiconductor device and semiconductor component

A semiconductor component, comprising:

• a semiconductor device, comprising:
• an active structure having a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer located between the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer;
• a ring-shaped semiconductor contact layer located on the second-conductivity-type semiconductor layer and having a first inner sidewall and a first outer sidewall;
• a first electrode having an upper surface and covering the ring-shaped semiconductor contact layer;
• and
• an insulating layer covering the first electrode and the active structure and having a second inner sidewall and a second outer sidewall;
• and
• a welding wire having a bonded portion bonded to the first electrode;
• wherein the second-conductivity-type semiconductor layer has a protruding portion having a third sidewall and the first electrode is located on the protruding portion and has a fourth sidewall, the first inner sidewall is not flush with the second inner sidewall in a vertical direction, and the insulating layer covers the upper surface of the first electrode, the fourth sidewall, the third sidewall and the active structure.