US 12,002,902 B2Granted

Light emitting device, and method for manufacturing thereof

AssigneeNichia Corporation

InventorMasatsugu Ichikawa

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Abstract

A method for manufacturing a light emitting device includes: roughening a light extracting surface of a semiconductor light emitting element, forming a first light transmissive layer on an entirety of the roughened light extracting surface, flattening a surface of a first light transmissive layer that is on a side opposite the semiconductor light emitting element, forming a second light transmissive layer on an entirety of a surface of an optical member, flattening a surface of the second light transmissive layer that is on a side opposite the optical member, and directly bonding the flattened surface of the first light transmissive layer and the flattened surface of second transmissive layer by performing surface-activated bonding, atomic diffusion bonding, or hydroxyl bonding.

Claims13

Dependent claims

A method for manufacturing a light emitting device comprising an optical member provided on a light extracting surface side of a semiconductor light emitting element via a first light transmissive layer and a second light transmissive layer, the method comprising steps of:

(a) roughening said light extracting surface of said semiconductor light emitting element,
(b) forming said first light transmissive layer on an entirety of said roughened light extracting surface,
(c) after forming said first light transmissive layer, flattening a surface of said first light transmissive layer that is on a side opposite said semiconductor light emitting element,
(d) forming said second light transmissive layer on an entirety of a surface of said optical member,
(e) after forming said second light transmissive layer, flattening a surface of said second light transmissive layer that is on a side opposite said optical member, and
(f) after flattening said surface of said first light transmissive layer and said surface of said second light transmissive layer, directly bonding said flattened surface of said first light transmissive layer and said flattened surface of said second light transmissive layer by performing surface-activated bonding, atomic diffusion bonding, or hydroxyl bonding.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application: 17/985,993Filed 14 Nov 2022 · division
Priority: JP 2013-22362828 Oct 2013
Published: US 2023/0073726 A19 Mar 2023
Granted: 4 Jun 2024
Term ends: Not estimatedThe source records don’t support an estimate.

Classification12 codes

H10H 20/82
Characterised by their shape, e.g. curved or truncated substrates: roughened surfaces, e.g. at the interface between epitaxial layers
H10H 20/018
Of bodies, e.g. forming semiconductor layers: bonding of wafers
H10H 20/0361
Of packages: of wavelength conversion means
H10H 20/0363
Of packages: of optical field-shaping means

Family

Application14/523,676Parent of this division · filed 24 Oct 2014
Application15/809,745Parent of this continuation · filed 10 Nov 2017
US 9,847,452 B2Parent of this division · filed 19 Dec 2017
Application16/822,363Parent of this division · filed 18 Mar 2020
US 10,636,941 B2Parent of this continuation · filed 28 Apr 2020
US 2023/0073726 A1Pre-grant publication · published 9 Mar 2023
US 11,522,104 B2Parent of this division
Application16/822,363Parent of this continuation
Application15/809,745Parent of this division
US 2015/0115278 A1Published application
US 2018/0097147 A1Published application
US 2020/0220044 A1Published application
US 12,002,902 B2This patent

From the US filing history. Foreign family members aren’t listed.

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