Infrared detecting device

Abstract

An infrared detecting device is provided. The infrared detecting device includes: a semiconductor substrate; a first layer having a first conductivity type on the semiconductor substrate; a light receiving layer on the first layer; and a second layer having a second conductivity type on the light receiving layer. A part of the first layer, the light receiving layer, and the second layer form a mesa structure. The second layer contains AlzIn1-zSb (0.05<z<0.18). The side surfaces and an upper surface of the mesa structure are covered with the protective layer. A part of an upper surface of the second layer that forms an interface between the second layer and the protective layer has an oxide layer made of a constituent material of the second layer. The oxide layer includes an oxide of Al and has no oxide of Sb.

Dependencies are inferred from the claim text.