Switching device for driving an actuator
AssigneeXerox Corporation
InventorJengping Lu
Life of this patent
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Abstract
A device includes a first transistor having a first source, a first gate, a first drain, and one or more electrodes. The first transistor serves as an inverter. The device also includes a second transistor having a second source, a second gate, and a second drain. The first and second sources are connected together. The first and second drains are connected together. The second transistor serves as an output, a driver, or both. The one or more electrodes, the second gate, or a combination thereof serve as tapped drains that are configured to sample a stepped voltage of the second transistor.
Claims22
A device, comprising:
- an optical switch configured to convert light into electrical current;
- a first transistor connected to the optical switch, wherein the first transistor comprises a first source, a first gate, a first drain, and one or more electrodes, wherein the first transistor serves as an inverter;
- a second transistor comprising a second source, a second gate, and a second drain, wherein the first and second sources are connected together, wherein the first and second drains are connected together, wherein the second transistor serves as an output, a driver, or both, and wherein the one or more electrodes, the second gate, or a combination thereof serve as tapped drains that are configured to sample a stepped voltage of the second transistor;
- an interlevel dielectric layer;
- and
- a source-drain (S/D) metal layer positioned at least partially within the interlevel dielectric layer, wherein the optical switch is positioned on first and second portions of the S/D metal layer, and wherein the first and second portions are separated from one another by a portion of the interlevel dielectric layer.
A switching device for driving an actuator, the switching device comprising:
- an optical switch configured to convert light into electrical current;
- a first transistor connected to the optical switch, wherein the first transistor is configured to serve as an inverter, and wherein the first transistor comprises:
- a first source;
- a first gate;
- a first drain;
- and
- a plurality of electrodes that are spaced apart from one another, wherein the electrodes are positioned at least partially between the first gate and the first drain;
- a second transistor configured to serve as an output, a driver, or both, wherein the second transistor comprises:
- a second source, wherein the first and second sources are connected together;
- a second gate;
- a second drain, wherein the first and second drains are connected together;
- and
- a plurality of field plates that are spaced apart from one another, wherein the field plates are positioned at least partially between the second source and the second drain, wherein each field plate is connected to one of the electrodes, and wherein the electrodes, the second gate, or a combination thereof serve as tapped drains that are configured to sample stepped voltages of the second transistor and to provide a voltage for the field plates of the second transistor;
- a gate dielectric layer;
- an interlevel dielectric layer positioned on the gate dielectric layer;
- a passivation layer positioned on the interlevel dielectric layer, wherein the optical switch is positioned at least partially within the interlevel dielectric layer, the passivation layer, or both;
- and
- a source-drain (S/D) metal layer positioned at least partially within the interlevel dielectric layer, wherein the optical switch is positioned on the S/D metal layer, wherein the optical switch is positioned on first and second portions of the S/D metal layer, and wherein the first and second portions are separated from one another by a portion of the interlevel dielectric layer.
A high-voltage switching device for driving a microelectromechanical systems (MEMS) actuator, the switching device comprising:
- an optical switch configured to convert light into electrical current;
- a first transistor connected to the optical switch, wherein the first transistor is configured to serve as an inverter, wherein the first transistor comprises:
- a first source;
- a first gate;
- a first drain;
- and
- a plurality of electrodes that are spaced apart from one another across a high-voltage drift region of an ungated channel of the first transistor, wherein the electrodes and the ungated channel of the first transistor are positioned at least partially between the first gate and the first drain;
- a second transistor configured to serve as an output, a driver, or both, wherein the second transistor comprises:
- a second source, wherein the first and second sources are connected together;
- a second gate, wherein the gate of the second gate is connected to one of the electrodes;
- a second drain, wherein the first and second drains are connected together;
- and
- a plurality of field plates that are spaced apart from one another across an ungated channel of the second transistor, wherein the field plates are configured to distribute high-voltage substantially uniformly across the ungated channel of the second transistor, wherein the field plates and the ungated channel of the second transistor are positioned at least partially between the second source and the second drain, wherein each field plate is connected to one of the electrodes, wherein the electrodes, the second gate, or a combination thereof serve as tapped drains that are distributed between the first gate and the first drain, and wherein the tapped drains are configured to sample stepped voltages of the second transistor and to provide a voltage for the field plates of the second transistor;
- a gate dielectric layer;
- an interlevel dielectric layer positioned on the gate dielectric layer;
- a passivation layer positioned on the interlevel dielectric layer, wherein the optical switch is positioned at least partially within the interlevel dielectric layer, the passivation layer, or both;
- and
- a source-drain (S/D) metal layer positioned at least partially within the interlevel dielectric layer, wherein the optical switch is positioned on the S/D metal layer, wherein the optical switch is positioned on first and second portions of the S/D metal layer, and wherein the first and second portions are separated from one another by a portion of the interlevel dielectric layer.
Dependencies are inferred from the claim text.