Field effect transistors including quantum layers

A field effect transistor, comprising:

• a substrate;
• an oxide layer disposed at least partially over the substrate;
• a quantum layer disposed over the oxide layer and the substrate, adjacent the oxide layer, the quantum layer further comprising:
• a first portion disposed directly over the substrate;
• a second portion formed opposite the first portion, the second portion disposed directly over the oxide layer;
• and
• an intermediate portion formed between the first portion and the second portion;
• a drain region disposed directly over the substrate adjacent the quantum layer;
• a source region disposed over the quantum layer, opposite the drain region;
• and
• a channel region formed over the quantum layer, between the drain region and the source region, the channel region formed adjacent and offset from the oxide layer and further including:
• an insulator layer disposed directly over the quantum layer, and
• a top gate formed in the channel region and disposed directly over the insulator layer.

A field effect transistor, comprising:

• a substrate;
• an oxide layer disposed at least partially over the substrate;
• a quantum layer disposed over the oxide layer and the substrate, adjacent the oxide layer;
• a drain region disposed directly over the substrate adjacent the quantum layer;
• a source region disposed over the quantum layer, opposite the drain region;
• and a channel region formed over the quantum layer, between the drain region and the source region;
• wherein the quantum layer further comprises:
• a first portion disposed directly over the substrate;
• a second portion formed opposite the first portion, the second portion disposed directly over the oxide layer;
• and
• an intermediate portion formed between the first portion and the second portion;
• and
• wherein the oxide layer includes an angled section extending toward the substrate layer, and the intermediate portion includes an angled surface substantially corresponding to the angled section of the oxide layer.