Contact structure for semiconductor device

A method, comprising:

• forming a transistor on a substrate, wherein the transistor comprises a source/drain (S/D) region and a gate structure;
• forming a layer of dielectric material on the transistor;
• forming a recess structure in the layer of dielectric material to expose the S/D region;
• forming a silicide layer on the S/D region in the recess structure, wherein forming the silicide layer comprises forming a metal oxide layer over side surfaces of the recess structure;
• depositing a first layer of metallic material on the silicide layer at a first deposition rate and on the side surfaces of the recess structure at a second deposition rate, wherein the first deposition rate is greater than the second deposition rate;
• and
• forming a second layer of metallic material on the first layer of metallic material.

A method, comprising:

• forming a source/drain (S/D) region between first and second gate structures on a substrate;
• forming a layer of dielectric material on the S/D region and the first and second gate structures;
• forming a recess structure extending through the layer of dielectric material to expose the S/D region;
• depositing a first layer of metallic material on the S/D region at a first deposition rate and on a sidewall of the layer of dielectric material at a second deposition rate, wherein the first deposition rate is greater than the second deposition rate;
• and
• forming a second layer of metallic material on the first layer of metallic material.