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US 12,002,864 B2Granted
Method for manufacturing semiconductor structure and semiconductor structure
AssigneeChangxin Memory Technologies, Inc.
InventorsWei Wan, Pan Wang, Xuesheng Wang
Life of this patent
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Abstract
A method for manufacturing the semiconductor structure includes: providing a substrate, in which active regions and isolation regions are formed; forming grooves in the active regions, which include first grooves located at upper portions and second grooves located at lower portions and communicating with the first grooves, and a width of the first grooves is greater than a width of the second grooves; and forming gate structures in the first grooves and the second grooves.
Claims19
A method for manufacturing a semiconductor structure, comprising:
- providing a substrate, wherein active regions and isolation regions for isolating the active regions are formed in the substrate;
- forming grooves in the active regions, wherein the grooves comprise first grooves located at upper portions and second grooves located at lower portions and communicating with the first grooves, and a width of the first grooves is greater than a width of the second grooves;
- forming gate structures in the first grooves and the second grooves;
- and
- wherein said forming the grooves in the active regions comprises:
- forming a first isolation layer on the substrate, and patterning the first isolation layer to form first openings in the first isolation layer corresponding to the active regions;
- patterning the substrate along the first openings to form the first grooves in the active regions;
- forming sacrificial layers in the first grooves and the first openings, wherein the first grooves and the first openings are filled up with the sacrificial layers;
- forming second openings in the sacrificial layers, wherein a width of the second opening is smaller than a width of the first openings;
- and
- patterning the substrate along the second openings to form the second grooves in the active regions.
8 more elements
A semiconductor structure, comprising:
- a substrate, wherein active regions and isolation regions for isolating the active regions are arranged in the substrate;
- grooves arranged in the active regions, wherein the grooves comprise first grooves located at upper portions and second grooves located at lower portions and communicating with the first grooves, and a width of the first grooves is greater than a width of the second grooves, such that step surfaces are formed between the first grooves and the second grooves;
- and
- gate structures arranged in the first grooves and the second grooves;
- wherein top surfaces of the gate structures are lower than top surfaces of the first grooves.
2 more elements
Dependencies are inferred from the claim text.