Back to results
US 12,002,859 B2Granted
Semiconductor device and method for producing a substrate for a semiconductor component, and use of indium during production of same
AssigneesJENOPTIK Optical Systems GmbH, Forschungsverbund Berlin E.V.
InventorsJos Boschker, Christiane Frank-Rotsch, Thomas Schroeder, Martin Zorn
Life of this patent
Estimating the term…
Abstract
A semiconductor device comprising a substrate and an aluminium gallium arsenide-based semiconductor component, the substrate being monocrystalline, and the substrate having a gallium indium arsenide mixed crystal with the empirical formula GA(1-x)In(x)As, the indium content x being between 0.1 percent and 4 percent.
Claims13
A semiconductor device comprising:
- a substrate,
- wherein the substrate is monocrystalline,
- wherein the substrate includes a gallium indium arsenide solid solution having the empirical formula Ga(1-x)In(x)As, where the indium content x is between 0.1 percent and 4 percent,
- wherein the substrate is produced by a process comprising the manufacturing of a solid solution of the substrate in one step by the vertical gradient freeze (VGF) method for crystal growing;
- and
- at least one aluminum gallium arsenide-based semiconductor component with an epitaxially produced semiconductor sequence,
- wherein the semiconductor component is disposed on the substrate, and
- wherein the semiconductor component is executed as a laser diode.
5 more elements
A semiconductor device comprising:
- a monocrystalline substrate, the monocrystalline substrate comprising a gallium indium arsenide solid solution having the empirical formula Ga(1-x)In(x)As, where the indium content x is between 0.2 percent and 2 percent, and
- at least one semiconductor component comprising aluminum gallium arsenide, wherein the at least one semiconductor component having an epitaxially produced semiconductor sequence, wherein the semiconductor component is disposed on the substrate, wherein a substrate lattice constant is equal to a semiconductor layer sequence lattice constant, and wherein the semiconductor component is executed as a laser diode.
Dependencies are inferred from the claim text.