US 12,002,857 B2 · High electron mobility transistor

Abstract

A high electron mobility transistor includes a substrate, a compound semiconductor stacked layer, a cap layer, a gate electrode, a source electrode, a drain electrode, and a buried electrode and/or a conductive structure. The substrate has an active area. The cap layer is disposed on the compound semiconductor stacked layer. The gate electrode is disposed on the cap layer and extends along a first direction. The source electrode and the drain electrode are disposed on the compound semiconductor stacked layer, respectively on two sides of the gate electrode, and arranged along a second direction, where the first direction is perpendicular to the second direction. The conductive structure and/or the buried electrode passes through the compound semiconductor stacked layer and surrounds or lies in the active area, where the conductive structure and/or the buried electrode has a constant electric potential or is grounded.

Claims19

Dependent claims

A high electron mobility transistor (HEMT), comprising:

a substrate, including an active area;
a compound semiconductor stacked layer, comprising a buffer layer, a high resistance layer, a channel layer, and a barrier layer disposed on the substrate in sequence;
a cap layer, disposed on the compound semiconductor stacked layer;
a gate electrode, disposed on the cap layer and extending along a first direction;
a source electrode and a drain electrode, disposed on the compound semiconductor stacked layer, respectively disposed on two sides of the gate structure, and arranged along a second direction, wherein the first direction is perpendicular to the second direction;
and
a buried electrode, passing through the compound semiconductor stacked layer, disposed in the active area and configured to have a constant electric potential or be grounded,
wherein the source electrode comprises a first portion and a second portion arranged along the first direction, the buried electrode is disposed between the first portion and the second portion, and the buried electrode is separated from the first portion and the second portion.

5 more elements

Dependencies are inferred from the claim text.

High electron mobility transistor

Life of this patent

High electron mobility transistor

Life of this patent

Abstract

Claims19