Semiconductor structure and method of fabricating the same

An apparatus comprising:

• a first diffusion layer formed on a first electrode layer;
• a core layer formed over the first diffusion layer;
• a second diffusion layer formed over the core layer;
• a plurality of diffusion regions formed in the second diffusion layer;
• a second electrode layer formed over the second diffusion layer and in contact with the plurality of diffusion regions;
• a square groove ring extending from the second electrode layer down to a diffusion boundary of the first diffusion layer;
• a glass layer formed over the square groove ring;
• and
• a polysilicon layer formed between the glass layer and the square groove ring.

An apparatus comprising:

• a substrate having a first surface, a first diffusion layer, a core layer over the first diffusion layer, a second diffusion layer over the core layer and a second surface opposite to the first surface, wherein the first diffusion layer and the core layer have a first conductivity type, and the second diffusion layer has a second conductivity type;
• a plurality of diffusion regions having the first conductivity type in the second diffusion layer;
• a first electrode layer on the first diffusion layer;
• a second electrode layer on the second diffusion layer, wherein the second electrode layer is in contact with the plurality of diffusion regions;
• a groove ring formed in the substrate;
• a glass layer disposed on the square groove ring;
• and
• a polysilicon layer disposed between the glass layer and the groove ring.