Super junction semiconductor device and method of manufacturing the same

A method of manufacturing a super junction semiconductor device comprising:

• preparing a substrate having a first conductive type, the substrate including an active region, a peripheral region surrounding the active region and a transition region interposed between the active region and the peripheral region;
• forming an epitaxial layer having the first conductive type on the substrate;
• forming a plurality of pillars having a second conductive type, the pillars extending in a vertical direction, being formed inside of the epitaxial layer and being interleaved with the substrate in a horizontal direction;
• forming a plurality of gate structures on the epitaxial layer in both the active region and the transition region, each of the gate structures extending in the horizontal direction to cross the epitaxial layer and the pillars;
• and
• performing an ion implanting process using the gate structures in the transition region as masks to form a reverse recovery layer of the second conductive type, the reverse recovery layer having vertical formation heights that are different as between on the pillars and on the epitaxial layer, the reverse recovery layer being configured to dissipate a reverse recovery current in the transition layer,
• wherein the reverse recovery layer is not formed in the active region,
• the reverse recovery layer includes a first reverse recovery layer pattern formed under each of the gate structures and a second reverse recovery layer pattern formed between the gate structures, and
• the first recovery layer pattern has both an upper surface and a lower surface, each having a vertical height higher than that of the second reverse recovery layer pattern such that the reverse recovery layer has a step shape wherein the first and the second recovery layer pattern are not connected to each other.