Light emitting device and manufacturing method thereof

A light emitting device, comprising:

• a substrate comprising a boundary, wherein the boundary comprises a first edge, a second edge opposite to the first edge, and a third edge connecting the first edge and the second edge, wherein a length of the first edge is greater than a length of the third edge in a top view of the light emitting device;
• a semiconductor stack formed on the substrate, wherein the semiconductor stack comprises a first side and a second side extending along the first edge and the second edge respectively, and a third side connected with the first side and the second side, which extends along the third edge;
• a first current blocking patterned structure and a second current blocking patterned structure formed on the first side and the second side of the semiconductor stack respectively and separated from each other in the top view of the light emitting device, wherein the first current blocking patterned structure is adjacent to the first edge, and the second current blocking patterned structure is adjacent to the second edge;
• and
• an electrode formed on the semiconductor stack, and formed on and contact with the first current blocking patterned structure;
• wherein the first current blocking patterned structure comprises a first side wall flush with the first edge and a third side wall opposite to the first side wall, and the second current blocking patterned structure comprises a second side wall flush with the second edge and a fourth side wall opposite to the second side wall in the top view of the light emitting device, wherein the third side wall is opposite to and facing to the fourth side wall.

A light emitting device, comprising:

• a substrate comprising a top surface, a first edge, a second edge opposite to the first edge, and a third edge connecting the first edge and the second edge, wherein a length of the first edge is greater than a length of the third edge;
• a semiconductor stack formed on the top surface, and exposing a periphery region of the top surface of the substrate surrounding the semiconductor stack, wherein the semiconductor stack comprises a continuous first semiconductor layer that is continuous on the substrate, and a mesa formed on a first portion of the continuous first semiconductor layer, wherein the mesa comprises a second semiconductor layer formed on the continuous first semiconductor layer, and an active layer interposed between the continuous first semiconductor layer and the second semiconductor layer, wherein the continuous first semiconductor layer comprises a continuous second portion that is continuous on the substrate and exposed by the mesa, and wherein the mesa comprises a side wall connecting to the second portion adjacent to the first edge;
• a first current blocking patterned structure and a second current blocking patterned structure separately formed on and partially covering the continuous second portion of the continuous first semiconductor layer and the periphery region, wherein the first current blocking patterned structure and the second current blocking patterned structure are adjacent to the first edge;
• and
• a first electrode formed on and contact with the first current blocking patterned structure and the second current blocking patterned structure, wherein the first electrode extends along the first edge;
• wherein the first current blocking patterned structure and the second current blocking patterned structure respectively comprises a first side wall and a second side wall facing to and spaced apart from the side wall of the mesa in a cross-sectional view of the light emitting device.