Optoelectronic device comprising two wire-shaped light-emitting diodes each having a layer that limits the leakage currents

A method for manufacturing an optoelectronic device, the method including the following successive steps of:

• a) forming a substrate delimiting a support face;
• b) forming at least one first semiconductor portion of at least one first light-emitting diode and one second light-emitting diode adjacent to each other, said at least one first semiconductor portion being doped according to a first type of doping, from the support face and having a wire shape elongated along a longitudinal axis extending in a first direction oriented transversely to the support face, such that the first semiconductor portion comprises a top end opposite the length of the axis to a lower end of the first semiconductor portion facing the support face of the substrate,
• c) forming an electrically resistive layer whose electrical resistance is greater than that of an active portion of each of the first and second light-emitting diodes, on all or part of the free surface of the intermediate structure obtained in step b) of the first light-emitting diode and on all or part of the free surface of the intermediate structure obtained in step b) of the second light-emitting diode,
• d) etching a first end of the electrically resistive layer located at the top end of the first semiconductor portion of the first light-emitting diode and at the level of the first portion semiconductor of the second light-emitting diode, the etching completely passing through the electrically resistive layer so as to expose the top end of the first semiconductor portion,
• e) forming said active portion of the first light-emitting diode and of the second light-emitting diode, obtained at least in part on the top end exposed to the first semiconductor portion of the first light-emitting diode and of the second light-emitting diode, and
• f) forming a second semiconductor portion of the first light-emitting diode and of the second light-emitting diode, obtained at least in part on all or part of the active portion,
• wherein at the end of one of steps c) and d), the electrically resistive layer of the first light-emitting diode, and the electrically resistive layer of the second light-emitting diode are separated from each other.