Imaging sensor with near-infrared absorber

An imaging sensor, comprising:

• a bulk silicon substrate;
• a pixel array comprising:
• an active pixel region including a subarray of active multi-tap pixels,
• an optical black pixel region including a subarray of optical black multi-tap pixels, and
• an optical black dummy pixel region including a subarray of optical black dummy pixels, the optical black dummy pixel region positioned between the active pixel region and the optical black pixel region;
• a near-infrared absorber positioned between the active pixel region and the optical black pixel region, the near-infrared absorber comprising a material having a higher near-infrared absorption coefficient than that of silicon;
• and
• a controller configured to
• supply a clocking signal to integrate light at a first tap of an optical black multi-tap pixel of the subarray of optical black multi-tap pixels to generate a first signal, and to integrate light at a second tap of the optical black multi-tap pixel to generate a second signal;
• and
• apply a dark current correction to an active multi-tap pixel of the subarray of active multi-tap pixels based at least in part on the second signal.