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US 12,002,826 B2Granted
Solid-state imaging element and solid-state imaging apparatus
AssigneeSony Semiconductor Solutions Corporation
InventorHiroaki Matsuo
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Abstract
A solid-state imaging element according to an embodiment of the present disclosure includes a first electrode including a plurality of electrodes, a second electrode opposed to the first electrode, and a photoelectric conversion layer provided between the first electrode and the second electrode, and the first electrode has, at least in a portion, an overlap section where the plurality of electrodes overlap each other with a first insulation layer interposed therebetween.
Claims16
A solid-state imaging element, comprising:
- a first electrode including a plurality of electrodes, wherein the plurality of electrodes includes a charge accumulation electrode and a charge readout electrode;
- a second electrode opposed to the first electrode;
- and
- a photoelectric conversion layer between the first electrode and the second electrode, wherein
- the first electrode has, at least in a portion, a first overlap section where the charge accumulation electrode overlaps with the charge readout electrode with a first insulation layer interposed therebetween,
- the charge accumulation electrode is configured to accumulate a charge generated in the photoelectric conversion layer, and
- the charge readout electrode is configured to readout the charge generated in the photoelectric conversion layer.
4 more elements
A solid-state imaging apparatus, comprising:
- a plurality of pixels each including at least one solid-state imaging element, ach of the at least one solid-state imaging element including:
- a first electrode including a plurality of electrodes, wherein the plurality of electrodes includes a charge accumulation electrode and a charge readout electrode;
- a second electrode opposed to the first electrode;
- and
- a photoelectric conversion layer between the first electrode and the second electrode, wherein
- the first electrode has, at least in a portion, an overlap section where the charge accumulation electrode overlaps with the charge readout electrode with a first insulation layer interposed therebetween,
- the charge accumulation electrode is configured to accumulate a charge generated in the photoelectric conversion layer, and
- the charge readout electrode is configured to readout the charge generated in the photoelectric conversion layer.
5 more elements
Dependencies are inferred from the claim text.