Solid-state imaging device and electronic apparatus with improved sensitivity

A solid-state imaging device comprising:

• a semiconductor substrate having one surface and another surface opposed to the one surface;
• a photoelectric conversion section formed to be embedded in the semiconductor substrate;
• a charge holding section provided in the one surface of the semiconductor substrate while being stacked on the photoelectric conversion section;
• an n-type semiconductor region provided in the one surface of the semiconductor substrate;
• a charge-voltage conversion section provided in the one surface of the semiconductor substrate;
• and
• a first separation film provided between the photoelectric conversion section and the charge holding section,
• wherein the first separation film overlaps, in a plan view, at least a portion of a gate of a transfer transistor provided between the photoelectric conversion section and the charge holding section,
• wherein the n-type semiconductor region extends to a position between the photoelectric conversion section and the charge holding section, and
• wherein the charge holding section is surrounded by the n-type semiconductor region.

An electronic apparatus comprising a solid-state imaging device, the solid-state imaging device including:

• a semiconductor substrate having one surface and another surface opposed to the one surface;
• a photoelectric conversion section formed to be embedded in the semiconductor substrate;
• a charge holding section provided in the one surface of the semiconductor substrate while being stacked on the photoelectric conversion section;
• an n-type semiconductor region provided in the one surface of the semiconductor substrate;
• and
• a charge-voltage conversion section provided in the one surface of the semiconductor substrate,
• wherein a charge generated in the photoelectric conversion section is transferred via the n-type semiconductor region to the charge holding section
• wherein the n-type semiconductor region extends to a position between the photoelectric conversion section and the charge holding section, and
• wherein the charge holding section is surrounded by the n-type semiconductor region.

An electronic apparatus comprising a solid-state imaging device, the solid-state imaging device including:

• a semiconductor substrate having one surface and another surface opposed to the one surface;
• a photoelectric conversion section formed to be embedded in the semiconductor substrate;
• a charge holding section provided in the one surface of the semiconductor substrate while being stacked on the photoelectric conversion section;
• an n-type semiconductor region provided in the one surface of the semiconductor substrate;
• a charge-voltage conversion section provided in the one surface of the semiconductor substrate;
• and
• a first separation film provided between the photoelectric conversion section and the charge holding section,
• wherein the first separation film overlaps, in a plan view, at least a portion of a gate of a transfer transistor provided between the photoelectric conversion section and the charge holding section,
• wherein the n-type semiconductor region extends to a position between the photoelectric conversion section and the charge holding section, and
• wherein the charge holding section is surrounded by the n-type semiconductor region.