Active matrix substrate

An active matrix substrate comprising:

• a substrate;
• and
• a plurality of oxide semiconductor TFTs supported on the substrate, wherein:
• the plurality of oxide semiconductor TFTs include a plurality of first TFTs and a plurality of second TFTs,
• each of the first TFTs includes a first lower electrode, a first insulating layer that covers the first lower electrode, a first oxide semiconductor layer disposed on the first insulating layer, and a first gate electrode disposed on a portion of the first oxide semiconductor layer with a first gate insulating layer therebetween,
• in each of the first TFTs,
• the first oxide semiconductor layer includes a first channel region that overlaps the first gate electrode when viewed in a normal direction of the substrate, and
• the first lower electrode has a first light-shielding portion that overlaps an entirety of the first channel region when viewed in the normal direction of the substrate, and the first light-shielding portion includes a first metal film,
• each of the second TFTs includes a second lower electrode, the first insulating layer that is extended to cover the second lower electrode, a second oxide semiconductor layer disposed on the first insulating layer, and a second gate electrode disposed on a portion of the second oxide semiconductor layer with a second gate insulating layer therebetween, and
• in each of the second TFTs,
• the second oxide semiconductor layer includes a second channel region that overlaps the second gate electrode when viewed in the normal direction of the substrate, and
• the second lower electrode has a light-transmitting portion that overlaps at least a portion of the second channel region when viewed in the normal direction of the substrate, and the light-transmitting portion includes a first transparent conductive film but not a light-shielding metal film.