Method of producing a semiconductor component and semiconductor component
AssigneeInfineon Technologies Dresden GmbH
InventorsDirk Meinhold, Steffen Bieselt
Life of this patent
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Abstract
A method of producing a semiconductor component includes: providing a silicon-based substrate; depositing an oxide layer on the silicon-based substrate; depositing a polycrystalline silicon layer on the oxide layer and simultaneously a crystalline silicon layer on the silicon-based substrate; producing an electronic component based on the polycrystalline silicon layer; and mounting a glass- or silicon-based lid on the crystalline silicon layer.
Claims20
A method of producing a semiconductor component, the method comprising:
- providing a silicon-based substrate;
- depositing an oxide layer on the silicon-based substrate;
- removing a ring-shaped section of the oxide layer to provide a corresponding exposed ring-shaped section on the silicon-based substrate;
- depositing a polycrystalline silicon layer on the oxide layer and simultaneously a crystalline silicon layer on the exposed ring-shaped section on the silicon-based substrate to form a ring-shaped crystalline silicon layer;
- producing an electronic component based on the polycrystalline silicon layer, wherein the ring-shaped crystalline silicon layer surrounds the electronic component;
- and
- mounting a glass- or silicon-based lid on the ring-shaped crystalline silicon layer.
A method of producing a semiconductor component, the method comprising:
- providing a silicon-based substrate;
- depositing an oxide layer on the silicon-based substrate;
- removing a ring-shaped section of the oxide layer to provide a corresponding exposed ring-shaped section on the silicon-based substrate;
- depositing a polycrystalline silicon layer on the oxide layer and simultaneously a crystalline silicon layer on the exposed ring-shaped section on the silicon-based substrate to form a ring-shaped crystalline silicon layer;
- producing an electronic component based on the polycrystalline silicon layer, wherein the ring-shaped crystalline silicon layer surrounds the electronic component;
- providing a glass- or silicon-based lid having a ring-shaped projection having spatial dimensions corresponding to spatial dimensions of the ring-shaped crystalline silicon layer;
- and
- mounting the glass- or silicon-based lid on the ring-shaped crystalline silicon layer such that the ring-shaped projection of the lid is connected to the ring-shaped crystalline layer.
A method of producing a semiconductor component, the method comprising:
- providing a silicon-based substrate;
- depositing an oxide layer on the silicon-based substrate;
- removing a ring-shaped section of the oxide layer to provide a corresponding exposed ring-shaped section on the silicon-based substrate;
- depositing a polycrystalline silicon layer on the oxide layer and simultaneously a crystalline silicon layer on the exposed ring-shaped section on the silicon-based substrate to form a ring-shaped crystalline silicon layer;
- producing a MEMS component based on the polycrystalline silicon layer, wherein the ring-shaped crystalline silicon layer surrounds the MEMS component;
- and
- mounting a glass- or silicon-based lid on the ring-shaped crystalline silicon layer.
Dependencies are inferred from the claim text.