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US 12,002,807 B2Granted
Semiconductor structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJing-Jung Huang, Ching En Chen, Jung-Hui Kao, Kong-Beng Thei
Life of this patent
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Abstract
A semiconductor structure includes a substrate including a first region and a second region; a first device disposed in the first region and a second device disposed in the second region; a first isolation disposed in the first region, wherein the first isolation is between a first source and a first drain, a first spacer overlaps the first isolation, the first isolation is separated from the first spacer by a first gate dielectric.
Claims20
A semiconductor structure, comprising:
- a substrate comprising a first region and a second region;
- a first device disposed in the first region and a second device disposed in the second region, wherein the first device comprises a first source, a first drain, a first gate dielectric, a first gate, and a pair of spacers, the first gate includes a first sidewall and a second sidewall opposite to the first sidewall, the first gate dielectric includes a third sidewall proximal to the first sidewall and a fourth sidewall opposite to the third sidewall, a first spacer of the pair of spacers lines the first sidewall and the third sidewall, and a second spacer of the pair of spacers lines the second sidewall and is separated from the fourth sidewall;
- a first isolation disposed in the first region, wherein the first isolation is between the first source and the first drain, the second spacer overlaps the first isolation, the first isolation is separated from the second spacer by the first gate dielectric;
- and
- a second isolation in the first region and adjacent to the first device, wherein a depth of the second isolation is less than a depth of the first isolation.
2 more elements
A semiconductor structure, comprising:
- a semiconductor substrate;
- a first device disposed in a first region, wherein the first device comprises a first spacer, and a second spacer coupled to the first spacer, and a height of the first spacer is less than a height of the second spacer;
- a first isolation in the first region,
- wherein the first device overlaps the first isolation, the first spacer has a first sidewall and a second sidewall coupled with the first sidewall, the first sidewall and the second sidewall of the first spacer overlap the first isolation;
- and
- a second isolation in the first region and adjacent to the first device, wherein a depth of the second isolation is less than a depth of the first isolation.
3 more elements
A semiconductor structure, comprising:
- a first isolation, disposed in a first region of a substrate, wherein the first isolation comprises a first width and a first depth;
- and
- a second isolation, disposed in the first region of the substrate and being adjacent to the first isolation, wherein the second isolation comprises a second width less than the first width, and a second depth less than the first depth;
- a first device, disposed over the first region of the substrate and including a first gate dielectric layer, a first spacer and a second spacer, wherein the first device is separated from a vertical projection of the second isolation and overlaps the first isolation, the first gate dielectric layer has a first portion covers the substrate and a second portion covers the first isolation, the first spacer lines a sidewall of the first portion, the second spacer is disposed over the second portion and separated from a sidewall of the second portion, a height of the first spacer is greater than a height of the second spacer, and the first portion is thinner than the second portion.
1 more element
Dependencies are inferred from the claim text.