Capacitor and method for forming the same

An integrated circuit (IC) structure, comprising:

• a semiconductor substrate;
• a shallow trench isolation (STI) structure embedded in the semiconductor substrate to define an active region in the semiconductor substrate;
• a capacitor comprising a plurality of conductive stacks extending upwardly from the STI structure and arranged in a first row, wherein each of the plurality of conductive stacks comprises a dummy gate strip extending along a top surface of the STI structure;
• and
• a plurality of metal gate strips arranged in a second row over the active region, wherein the dummy gate strips having a same material composition as the plurality of metal gate strips of the plurality of conductive stacks.

An integrated circuit (IC) structure, comprising:

• a substrate having an active region;
• a dielectric material embedded in the substrate and laterally surrounding the active region;
• and
• a gate strip over the active region;
• source/drain regions in the active region and at opposite sides of the gate strip;
• a first conductive stack comprising a first metal strip over the dielectric material, and a plurality of first contacts landing on the first metal strip;
• and
• a second conductive stack comprising a second metal strip over the dielectric material and extending in parallel with the first metal strip, and a plurality of second contacts landing on the second metal strip, wherein the first and second conductive stacks are electrically isolated from each other and are of a capacitor, and the first and second conductive stacks have a same material composition as the gate strip.