Bonded semiconductor devices having processor and dynamic random-access memory and methods for forming the same

A method for forming a semiconductor device, comprising:

• forming first semiconductor structures, wherein at least one of the first semiconductor structures comprises a processor, static random-access memory (SRAM) cells, and a first bonding layer comprising first bonding contacts;
• forming second semiconductor structures, wherein at least one of the second semiconductor structures comprises dynamic random-access memory (DRAM) cells and a second bonding layer comprising second bonding contacts;
• and
• bonding the first semiconductor structures and the second semiconductor structures,
• wherein the first bonding contacts of the first semiconductor structure are in contact with the second bonding contacts of the second semiconductor structure;
• and
• wherein at least one of the first semiconductor structures and the second semiconductor structures further comprises a peripheral circuit, and the peripheral circuit comprises an input/output buffer, a decoder, and a sense amplifier configured to facilitate operations of the DRAM cells in the at least one of the second semiconductor structures.